Integrated Circuits (ICs)

IR2130PBF

Obsolete

INFINEON

IC GATE DRVR HALF-BRIDGE 28DIP

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Integrated Circuits (ICs)

IR2130PBF

Obsolete

INFINEON

IC GATE DRVR HALF-BRIDGE 28DIP

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2130PBF

Channel Type	3-Phase
Current - Peak Output (Source, Sink) [custom]	420 mA
Current - Peak Output (Source, Sink) [custom]	200 mA
Driven Configuration	Half-Bridge
Gate Type	IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 2.2 V
Mounting Type	Through Hole
Number of Drivers	6
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	28-DIP
Package / Case	15.24 mm
Package / Case	0.6 in
Rise / Fall Time (Typ)	80 ns
Rise / Fall Time (Typ)	35 ns
Supplier Device Package	28-DIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2130 Series

Part	Gate Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Logic Voltage - VIL, VIH	Input Type	Driven Configuration	Channel Type	Package / Case [custom]	Package / Case	Package / Case [custom]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rise / Fall Time (Typ)	Rise / Fall Time (Typ)	Number of Drivers	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Package / Case	Package / Case
INFINEON IR2130S	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Surface Mount	0.8 V 2.2 V	Inverting	Half-Bridge	3-Phase	0.295 "	28-SOIC	7.5 mm	28-SOIC	-40 °C	150 °C	80 ns	35 ns	6	250 mA	500 mA	600 V
INFINEON IR2130JPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Surface Mount	0.8 V 2.2 V	Inverting	Half-Bridge	3-Phase		44-LCC (J-Lead) 32 Leads		44-PLCC	-40 °C	150 °C	80 ns	35 ns	6	250 mA	500 mA	600 V	32	16.58	16.58
INFINEON IR2130STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Surface Mount	0.8 V 2.2 V	Inverting	Half-Bridge	3-Phase	0.295 "	28-SOIC	7.5 mm	28-SOIC	-40 °C	150 °C	80 ns	35 ns	6	250 mA	500 mA	600 V
INFINEON IR2130	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Through Hole	0.8 V 2.2 V	Inverting	Half-Bridge	3-Phase		28-DIP		28-PDIP	-40 °C	150 °C	80 ns	35 ns	6	250 mA	500 mA	600 V				15.24 mm	0.6 in
INFINEON IR2130J	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Surface Mount	0.8 V 2.2 V	Inverting	Half-Bridge	3-Phase		44-LCC (J-Lead) 32 Leads		44-PLCC	-40 °C	150 °C	80 ns	35 ns	6	250 mA	500 mA	600 V	32	16.58	16.58
INFINEON IR2130SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Surface Mount	0.8 V 2.2 V	Inverting	Half-Bridge	3-Phase	0.295 "	28-SOIC	7.5 mm	28-SOIC	-40 °C	150 °C	80 ns	35 ns	6	250 mA	500 mA	600 V
INFINEON IR2130JPBF
INFINEON IR2130STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Surface Mount	0.8 V 2.2 V	Inverting	Half-Bridge	3-Phase	0.295 "	28-SOIC	7.5 mm	28-SOIC	-40 °C	150 °C	80 ns	35 ns	6	250 mA	500 mA	600 V
INFINEON IR2130JTR	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Surface Mount	0.8 V 2.2 V	Inverting	Half-Bridge	3-Phase		44-LCC (J-Lead) 32 Leads		44-PLCC	-40 °C	150 °C	80 ns	35 ns	6	250 mA	500 mA	600 V	32	16.58	16.58
INFINEON IR2130PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Through Hole	0.8 V 2.2 V	Inverting	Half-Bridge	3-Phase		28-DIP		28-PDIP	-40 °C	150 °C	80 ns	35 ns	6	250 mA	500 mA	600 V				15.24 mm	0.6 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00
		0	$ 0.00
		27	$ 14.28
		27	$ 14.28
	Tube	1	$ 17.60
		1	$ 17.60
		10	$ 12.69
		10	$ 12.69
		25	$ 11.42
		25	$ 11.42

Description

General part information

IR2130 Series

Half-Bridge Gate Driver IC Inverting 28-PDIP

Documents

Technical documentation and resources