IR2130 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 28SOIC
| Part | Gate Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Logic Voltage - VIL, VIH | Input Type | Driven Configuration | Channel Type | Package / Case [custom] | Package / Case | Package / Case [custom] | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Rise / Fall Time (Typ) | Rise / Fall Time (Typ) | Number of Drivers | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | High Side Voltage - Max (Bootstrap) [Max] | Supplier Device Package | Supplier Device Package [x] | Supplier Device Package [y] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 10 VDC | Surface Mount | 0.8 V 2.2 V | Inverting | Half-Bridge | 3-Phase | 0.295 " | 28-SOIC | 7.5 mm | 28-SOIC | -40 °C | 150 °C | 80 ns | 35 ns | 6 | 250 mA | 500 mA | 600 V | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 10 VDC | Surface Mount | 0.8 V 2.2 V | Inverting | Half-Bridge | 3-Phase | 44-LCC (J-Lead) 32 Leads | 44-PLCC | -40 °C | 150 °C | 80 ns | 35 ns | 6 | 250 mA | 500 mA | 600 V | 32 | 16.58 | 16.58 | ||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 10 VDC | Surface Mount | 0.8 V 2.2 V | Inverting | Half-Bridge | 3-Phase | 0.295 " | 28-SOIC | 7.5 mm | 28-SOIC | -40 °C | 150 °C | 80 ns | 35 ns | 6 | 250 mA | 500 mA | 600 V | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 10 VDC | Through Hole | 0.8 V 2.2 V | Inverting | Half-Bridge | 3-Phase | 28-DIP | 28-PDIP | -40 °C | 150 °C | 80 ns | 35 ns | 6 | 250 mA | 500 mA | 600 V | 15.24 mm | 0.6 in | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 10 VDC | Surface Mount | 0.8 V 2.2 V | Inverting | Half-Bridge | 3-Phase | 44-LCC (J-Lead) 32 Leads | 44-PLCC | -40 °C | 150 °C | 80 ns | 35 ns | 6 | 250 mA | 500 mA | 600 V | 32 | 16.58 | 16.58 | ||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 10 VDC | Surface Mount | 0.8 V 2.2 V | Inverting | Half-Bridge | 3-Phase | 0.295 " | 28-SOIC | 7.5 mm | 28-SOIC | -40 °C | 150 °C | 80 ns | 35 ns | 6 | 250 mA | 500 mA | 600 V | |||||
INFINEON | |||||||||||||||||||||||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 10 VDC | Surface Mount | 0.8 V 2.2 V | Inverting | Half-Bridge | 3-Phase | 0.295 " | 28-SOIC | 7.5 mm | 28-SOIC | -40 °C | 150 °C | 80 ns | 35 ns | 6 | 250 mA | 500 mA | 600 V | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 10 VDC | Surface Mount | 0.8 V 2.2 V | Inverting | Half-Bridge | 3-Phase | 44-LCC (J-Lead) 32 Leads | 44-PLCC | -40 °C | 150 °C | 80 ns | 35 ns | 6 | 250 mA | 500 mA | 600 V | 32 | 16.58 | 16.58 | ||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 20 V | 10 VDC | Through Hole | 0.8 V 2.2 V | Inverting | Half-Bridge | 3-Phase | 28-DIP | 28-PDIP | -40 °C | 150 °C | 80 ns | 35 ns | 6 | 250 mA | 500 mA | 600 V | 15.24 mm | 0.6 in |