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INFINEON IRF1010EZPBF
Discrete Semiconductor Products

IRF540ZPBF

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INFINEON

POWER MOSFET, AUTOMOTIVE, N CHANNEL, 100 V, 36 A, 0.0265 OHM, TO-220AB, THROUGH HOLE

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INFINEON IRF1010EZPBF
Discrete Semiconductor Products

IRF540ZPBF

Active
INFINEON

POWER MOSFET, AUTOMOTIVE, N CHANNEL, 100 V, 36 A, 0.0265 OHM, TO-220AB, THROUGH HOLE

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Technical Specifications

Parameters and characteristics for this part

SpecificationIRF540ZPBF
Current - Continuous Drain (Id) @ 25°C36 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs63 nC
Input Capacitance (Ciss) (Max) @ Vds1770 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)92 W
Rds On (Max) @ Id, Vgs26.5 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V
PartPackage / CaseGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CPower Dissipation (Max)Rds On (Max) @ Id, VgsDrive Voltage (Max Rds On, Min Rds On)Operating Temperature [Max]Operating Temperature [Min]Input Capacitance (Ciss) (Max) @ VdsSupplier Device PackageVgs (Max)FET TypeVgs(th) (Max) @ IdTechnologyMounting Type
INFINEON IRF1010EZPBF
INFINEON
TO-220-3
63 nC
100 V
36 A
92 W
26.5 mOhm
10 V
175 °C
-55 °C
1770 pF
TO-220AB
20 V
N-Channel
4 V
MOSFET (Metal Oxide)
Through Hole
TO-262-3
INFINEON
I2PAK
TO-262-3 Long Leads
TO-262AA
63 nC
100 V
36 A
92 W
26.5 mOhm
10 V
175 °C
-55 °C
1770 pF
TO-262
20 V
N-Channel
4 V
MOSFET (Metal Oxide)
Through Hole
Infineon Technologies AG-IRF3205ZLPBF MOSFETs Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-262 Tube
INFINEON
I2PAK
TO-262-3 Long Leads
TO-262AA
71 nC
100 V
33 A
130 W
44 mOhm
10 V
175 °C
-55 °C
1960 pF
TO-262
20 V
N-Channel
4 V
MOSFET (Metal Oxide)
Through Hole
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
71 nC
100 V
33 A
130 W
44 mOhm
10 V
175 °C
-55 °C
1960 pF
D2PAK
20 V
N-Channel
4 V
MOSFET (Metal Oxide)
Surface Mount
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
71 nC
100 V
33 A
130 W
44 mOhm
10 V
175 °C
-55 °C
1960 pF
D2PAK
20 V
N-Channel
4 V
MOSFET (Metal Oxide)
Surface Mount
TO-220AB PKG
INFINEON
TO-220-3
71 nC
100 V
33 A
130 W
44 mOhm
10 V
175 °C
-55 °C
1960 pF
TO-220AB
20 V
N-Channel
4 V
MOSFET (Metal Oxide)
Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 44569$ 0.77
Tube 1$ 1.77
10$ 1.13
100$ 0.76
500$ 0.60
1000$ 0.55
2000$ 0.50
5000$ 0.46

Description

General part information

IRF540 Series

The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.

Documents

Technical documentation and resources