
IRF540ZPBF
ActivePOWER MOSFET, AUTOMOTIVE, N CHANNEL, 100 V, 36 A, 0.0265 OHM, TO-220AB, THROUGH HOLE
Deep-Dive with AI
Search across all available documentation for this part.

IRF540ZPBF
ActivePOWER MOSFET, AUTOMOTIVE, N CHANNEL, 100 V, 36 A, 0.0265 OHM, TO-220AB, THROUGH HOLE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF540ZPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 36 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 92 W |
| Rds On (Max) @ Id, Vgs | 26.5 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
| Part | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Vgs (Max) | FET Type | Vgs(th) (Max) @ Id | Technology | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | TO-220-3 | 63 nC | 100 V | 36 A | 92 W | 26.5 mOhm | 10 V | 175 °C | -55 °C | 1770 pF | TO-220AB | 20 V | N-Channel | 4 V | MOSFET (Metal Oxide) | Through Hole |
INFINEON | I2PAK TO-262-3 Long Leads TO-262AA | 63 nC | 100 V | 36 A | 92 W | 26.5 mOhm | 10 V | 175 °C | -55 °C | 1770 pF | TO-262 | 20 V | N-Channel | 4 V | MOSFET (Metal Oxide) | Through Hole |
INFINEON | I2PAK TO-262-3 Long Leads TO-262AA | 71 nC | 100 V | 33 A | 130 W | 44 mOhm | 10 V | 175 °C | -55 °C | 1960 pF | TO-262 | 20 V | N-Channel | 4 V | MOSFET (Metal Oxide) | Through Hole |
INFINEON | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 71 nC | 100 V | 33 A | 130 W | 44 mOhm | 10 V | 175 °C | -55 °C | 1960 pF | D2PAK | 20 V | N-Channel | 4 V | MOSFET (Metal Oxide) | Surface Mount |
INFINEON | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 71 nC | 100 V | 33 A | 130 W | 44 mOhm | 10 V | 175 °C | -55 °C | 1960 pF | D2PAK | 20 V | N-Channel | 4 V | MOSFET (Metal Oxide) | Surface Mount |
INFINEON | TO-220-3 | 71 nC | 100 V | 33 A | 130 W | 44 mOhm | 10 V | 175 °C | -55 °C | 1960 pF | TO-220AB | 20 V | N-Channel | 4 V | MOSFET (Metal Oxide) | Through Hole |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 44569 | $ 0.77 | |
| Tube | 1 | $ 1.77 | ||
| 10 | $ 1.13 | |||
| 100 | $ 0.76 | |||
| 500 | $ 0.60 | |||
| 1000 | $ 0.55 | |||
| 2000 | $ 0.50 | |||
| 5000 | $ 0.46 | |||
Description
General part information
IRF540 Series
The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
Documents
Technical documentation and resources