TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

IRF540NSTRRPBF

Obsolete

INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 44 MOHM;

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Search across all available documentation for this part.

DocumentsIR Part Numbering System Datasheet

Discrete Semiconductor Products

IRF540NSTRRPBF

Obsolete

INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 44 MOHM;

Deep-Dive with AI

DocumentsIR Part Numbering System Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF540NSTRRPBF

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	71 nC
Input Capacitance (Ciss) (Max) @ Vds	1960 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs	44 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF540 Series

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Technology	Mounting Type
INFINEON IRF540ZPBF	TO-220-3	63 nC	100 V	36 A	92 W	26.5 mOhm	10 V	175 °C	-55 °C	1770 pF	TO-220AB	20 V	N-Channel	4 V	MOSFET (Metal Oxide)	Through Hole
INFINEON IRF540ZLPBF	I2PAK TO-262-3 Long Leads TO-262AA	63 nC	100 V	36 A	92 W	26.5 mOhm	10 V	175 °C	-55 °C	1770 pF	TO-262	20 V	N-Channel	4 V	MOSFET (Metal Oxide)	Through Hole
INFINEON IRF540NLPBF	I2PAK TO-262-3 Long Leads TO-262AA	71 nC	100 V	33 A	130 W	44 mOhm	10 V	175 °C	-55 °C	1960 pF	TO-262	20 V	N-Channel	4 V	MOSFET (Metal Oxide)	Through Hole
INFINEON IRF540NSTRRPBF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	71 nC	100 V	33 A	130 W	44 mOhm	10 V	175 °C	-55 °C	1960 pF	D2PAK	20 V	N-Channel	4 V	MOSFET (Metal Oxide)	Surface Mount
INFINEON IRF540NSTRLPBF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	71 nC	100 V	33 A	130 W	44 mOhm	10 V	175 °C	-55 °C	1960 pF	D2PAK	20 V	N-Channel	4 V	MOSFET (Metal Oxide)	Surface Mount
INFINEON IRF540NPBF	TO-220-3	71 nC	100 V	33 A	130 W	44 mOhm	10 V	175 °C	-55 °C	1960 pF	TO-220AB	20 V	N-Channel	4 V	MOSFET (Metal Oxide)	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00
Mouser	N/A	1	$ 2.02
		10	$ 1.58
		100	$ 1.45
		500	$ 1.42
		800	$ 1.20

Description

General part information

IRF540 Series

The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.

Documents

Technical documentation and resources