Discrete Semiconductor Products

SISHA10DN-T1-GE3

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MOSFET N-CH 30V 25A/30A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 30V 25A/30A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISHA10DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	25 A, 30 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2425 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SH
Power Dissipation (Max)	3.6 W, 39 W
Rds On (Max) @ Id, Vgs	3.7 mOhm
Supplier Device Package	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SISHA10DN-T1-GE3	Surface Mount	-55 °C	150 °C	2425 pF	30 V	MOSFET (Metal Oxide)	N-Channel	51 nC	2.2 V	PowerPAK® 1212-8SH	-16 V 20 V	3.6 W 39 W	PowerPAK® 1212-8SH	25 A 30 A	3.7 mOhm	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 25A (Ta), 30A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8SH

Technical documentation and resources