SISHA10 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 25A/30A PPAK
| Part | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Technology | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id [Max] | Supplier Device Package | Vgs (Max) | Power Dissipation (Max) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Surface Mount | -55 °C | 150 °C | 2425 pF | 30 V | MOSFET (Metal Oxide) | N-Channel | 51 nC | 2.2 V | PowerPAK® 1212-8SH | -16 V 20 V | 3.6 W 39 W | PowerPAK® 1212-8SH | 25 A 30 A | 3.7 mOhm | 4.5 V 10 V |