Discrete Semiconductor Products

NX5020UNBKSX

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50 V, DUAL N-CHANNEL TRENCH MOSFET

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DocumentsNX5020UNBKSX | Datasheet plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body +9

Discrete Semiconductor Products

NX5020UNBKSX

Active

Nexperia USA Inc.

50 V, DUAL N-CHANNEL TRENCH MOSFET

Deep-Dive with AI

DocumentsNX5020UNBKSX | Datasheet plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body +9

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NX5020UNBKSX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	480 mA, 300 mA
Drain to Source Voltage (Vdss)	50 V
Gate Charge (Qg) (Max) @ Vgs	1 nC
Input Capacitance (Ciss) (Max) @ Vds	20.5 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max	860 mW, 280 mW
Rds On (Max) @ Id, Vgs	1.8 Ohm
Supplier Device Package	6-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	950 mV

NX5020UNBKS Series

50 V, dual N-channel Trench MOSFET

Part	Technology	Supplier Device Package	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Configuration	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
Nexperia USA Inc. NX5020UNBKSX	MOSFET (Metal Oxide)	6-TSSOP	Surface Mount	6-TSSOP SC-88 SOT-363	1.8 Ohm	2 N-Channel (Dual)	280 mW 860 mW	1 nC	150 °C	-55 °C	50 V	20.5 pF	300 mA 480 mA	950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2970	$ 0.35

Description

General part information

NX5020UNBKS Series

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.