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50 V, dual N-channel Trench MOSFET
Description
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Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.
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50 V, dual N-channel Trench MOSFET
50 V, dual N-channel Trench MOSFET
| Part | Technology | Supplier Device Package | Mounting Type | Package / Case | Rds On (Max) @ Id, Vgs | Configuration | Power - Max | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | 6-TSSOP | Surface Mount | 6-TSSOP SC-88 SOT-363 | 1.8 Ohm | 2 N-Channel (Dual) | 280 mW 860 mW | 1 nC | 150 °C | -55 °C | 50 V | 20.5 pF | 300 mA 480 mA | 950 mV |