Discrete Semiconductor Products

SSM3J114TU(TE85L)

Obsolete

MOSFET P-CH 20V 1.8A UFM

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 1.8A UFM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J114TU(TE85L)

Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	7.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	331 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	149 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

Part	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Toshiba Semiconductor and Storage SSM3J114TU(TE85L)	149 mOhm	MOSFET (Metal Oxide)	Surface Mount	20 V	150 °C	1.8 A	P-Channel	1 V	500 mW	7.7 nC	8 V	UFM	1.5 V	4 V	331 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 1.8A (Ta) 500mW (Ta) Surface Mount UFM

Technical documentation and resources