SSM3J114 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET P-CH 20V 1.8A UFM
| Part | Rds On (Max) @ Id, Vgs | Technology | Mounting Type | Drain to Source Voltage (Vdss) | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 149 mOhm | MOSFET (Metal Oxide) | Surface Mount | 20 V | 150 °C | 1.8 A | P-Channel | 1 V | 500 mW | 7.7 nC | 8 V | UFM | 1.5 V | 4 V | 331 pF |