Discrete Semiconductor Products

TK80S06K3L(T6L1,NQ

Obsolete

MOSFET N-CH 60V 80A DPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 80A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK80S06K3L(T6L1,NQ

Current - Continuous Drain (Id) @ 25°C	80 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	85 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	4200 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	100 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Power Dissipation (Max)	Qualification	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage TK80S06K3L(T6L1,NQ	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	6 V 10 V	85 nC	DPAK+	100 W	AEC-Q101	175 °C	80 A	4200 pF	Automotive	3 V	60 V	N-Channel	20 V	MOSFET (Metal Oxide)	5.5 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 60 V 80A (Ta) 100W (Tc) Surface Mount DPAK+

Technical documentation and resources

No documents available