TK80S06 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N-CH 60V 80A DPAK
| Part | Mounting Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Power Dissipation (Max) | Qualification | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Grade | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | FET Type | Vgs (Max) | Technology | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 6 V 10 V | 85 nC | DPAK+ | 100 W | AEC-Q101 | 175 °C | 80 A | 4200 pF | Automotive | 3 V | 60 V | N-Channel | 20 V | MOSFET (Metal Oxide) | 5.5 mOhm |