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INFINEON S25FL128LAGMFI010
Integrated Circuits (ICs)

IR21531STRPBF

Active
INFINEON

THE IR21531S IS A HALF BRIDGE DRIVER, LO IN PHASE WITH RT, PROGRAMMABLE OSCILLATING FREQUENCY, 0.6ΜS DEADTIME (8-LEAD SOIC PACKAGE)

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INFINEON S25FL128LAGMFI010
Integrated Circuits (ICs)

IR21531STRPBF

Active
INFINEON

THE IR21531S IS A HALF BRIDGE DRIVER, LO IN PHASE WITH RT, PROGRAMMABLE OSCILLATING FREQUENCY, 0.6ΜS DEADTIME (8-LEAD SOIC PACKAGE)

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Technical Specifications

Parameters and characteristics for this part

SpecificationIR21531STRPBF
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]600 V
Input TypeRC Input Circuit
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 C
Package / Case0.154 in
Package / Case8-SOIC
Package / Case3.9 mm
Rise / Fall Time (Typ) [custom]45 ns
Rise / Fall Time (Typ) [custom]80 ns
Supplier Device Package8-SOIC
Voltage - Supply [Max]15.6 V
Voltage - Supply [Min]10 VDC
PartGate TypeNumber of DriversPackage / CasePackage / CasePackage / CaseVoltage - Supply [Min]Voltage - Supply [Max]Mounting TypeHigh Side Voltage - Max (Bootstrap) [Max]Rise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Input TypeOperating Temperature [Min]Operating Temperature [Max]Supplier Device PackageDriven ConfigurationChannel Type
IR21531SPBF
INFINEON
MOSFET (N-Channel)
N-Channel MOSFET
2
0.154 in
8-SOIC
3.9 mm
10 VDC
15.6 V
Surface Mount
600 V
45 ns
80 ns
RC Input Circuit
-40 C
125 °C
8-SOIC
Half-Bridge
Synchronous
IR21531S
INFINEON
MOSFET (N-Channel)
N-Channel MOSFET
2
0.154 in
8-SOIC
3.9 mm
10 VDC
15.6 V
Surface Mount
600 V
45 ns
80 ns
RC Input Circuit
-40 C
125 °C
8-SOIC
Half-Bridge
Synchronous
IR4427PBF
INFINEON
MOSFET (N-Channel)
N-Channel MOSFET
2
8-DIP (0.300"
7.62mm)
10 VDC
15.6 V
Through Hole
600 V
45 ns
80 ns
RC Input Circuit
-40 C
125 °C
8-PDIP
Half-Bridge
Synchronous
IR21531STR
INFINEON
MOSFET (N-Channel)
N-Channel MOSFET
2
0.154 in
8-SOIC
3.9 mm
10 VDC
15.6 V
Surface Mount
600 V
45 ns
80 ns
RC Input Circuit
-40 C
125 °C
8-SOIC
Half-Bridge
Synchronous
INFINEON IR21531DPBF
INFINEON
MOSFET (N-Channel)
N-Channel MOSFET
2
8-DIP (0.300"
7.62mm)
10 VDC
15.6 V
Through Hole
600 V
45 ns
80 ns
RC Input Circuit
-40 C
125 °C
8-PDIP
Half-Bridge
Synchronous
8-DIP
INFINEON
MOSFET (N-Channel)
N-Channel MOSFET
2
8-DIP (0.300"
7.62mm)
10 VDC
15.6 V
Through Hole
600 V
45 ns
80 ns
RC Input Circuit
-40 C
125 °C
8-PDIP
Half-Bridge
Synchronous
MOSFET (N-Channel)
N-Channel MOSFET
2
0.154 in
8-SOIC
3.9 mm
10 VDC
15.6 V
Surface Mount
600 V
45 ns
80 ns
RC Input Circuit
-40 C
125 °C
8-SOIC
Half-Bridge
Synchronous
8-DIP
INFINEON
MOSFET (N-Channel)
N-Channel MOSFET
2
8-DIP (0.300"
7.62mm)
10 VDC
15.6 V
Through Hole
600 V
45 ns
80 ns
RC Input Circuit
-40 C
125 °C
8-PDIP
Half-Bridge
Synchronous
INFINEON IR21531DPBF
INFINEON
MOSFET (N-Channel)
2
8-DIP (0.300"
7.62mm)
10 VDC
15.6 V
Through Hole
600 V
45 ns
80 ns
RC Input Circuit
-40 C
125 °C
8-PDIP
Half-Bridge
Synchronous

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.86
10$ 1.85
25$ 1.59
100$ 1.29
250$ 1.15
500$ 1.06
1000$ 0.99
Digi-Reel® 1$ 2.86
10$ 1.85
25$ 1.59
100$ 1.29
250$ 1.15
500$ 1.06
1000$ 0.99
N/A 12438$ 1.79
Tape & Reel (TR) 2500$ 0.91
5000$ 0.86
7500$ 0.84

Description

General part information

IR21531 Series

IR21531STRPBF is a self-oscillating half-bridge gate driver. It incorporates a high-voltage half-bridge gate driver with a front-end oscillator similar to the industry standard CMOS 555 timer. The IR21531 provides more functionality and is easier to use than the previous IC. A shutdown feature has been designed into the CT pin so that both gate driver outputs can be disabled using a low-voltage control signal. In addition, the gate driver output pulse width is the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate driver, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been paid to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.

Documents

Technical documentation and resources