
IR21531DPBF
ObsoleteTHE IR21531D IS A 600 V HALF-BRIDGE GATE DRIVER IC WITH OSCILLATOR, INTEGRATED BOOTSTRAP FET, PROGRAMMABLE FREQUENCY AND PROGRAMMABLE SHUTDOWN
Deep-Dive with AI
Search across all available documentation for this part.

IR21531DPBF
ObsoleteTHE IR21531D IS A 600 V HALF-BRIDGE GATE DRIVER IC WITH OSCILLATOR, INTEGRATED BOOTSTRAP FET, PROGRAMMABLE FREQUENCY AND PROGRAMMABLE SHUTDOWN
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IR21531DPBF |
|---|---|
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Gate Type | MOSFET (N-Channel) |
| High Side Voltage - Max (Bootstrap) [Max] | 600 V |
| Input Type | RC Input Circuit |
| Mounting Type | Through Hole |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | 8-DIP (0.300", 7.62mm) |
| Rise / Fall Time (Typ) [custom] | 45 ns |
| Rise / Fall Time (Typ) [custom] | 80 ns |
| Supplier Device Package | 8-PDIP |
| Voltage - Supply [Max] | 15.6 V |
| Voltage - Supply [Min] | 10 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 161 | $ 1.87 | |
| 161 | $ 1.87 | |||
| N/A | 6377 | $ 2.14 | ||
| 6377 | $ 2.14 | |||
| 14304 | $ 3.32 | |||
| 14304 | $ 3.32 | |||
Description
General part information
IR21531 Series
The IR21531DPBF is a self-oscillating Half-bridge Gate Driver IC incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IC provides more functionality and is easier to use. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition the gate driver output pulse widths are the same once the rising under-voltage lockout threshold on VCC has been improved significantly, both by lowering the peak DI/DT of the gate driver and by increasing the under-voltage lockout hysteresis to 1V.
Documents
Technical documentation and resources