Specification	SSM6N40TU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	1.6 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs [Max]	5.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	180 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	122 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.6 V

SSM6N40TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 1.6 A, 0.122 Ω@10V, SOT-363F(UF6)

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	FET Feature	Configuration	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature
Toshiba Semiconductor and Storage SSM6N40TU,LF	5.1 nC	500 mW	MOSFET (Metal Oxide)	30 V	2.6 V	6-SMD Flat Leads	1.6 A	180 pF	UF6	Logic Level Gate 4V Drive	2 N-Channel (Dual)	Surface Mount	122 mOhm	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	13645	$ 0.58

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 1.6 A, 0.122 Ω@10V, SOT-363F(UF6)

Technical documentation and resources