High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 1.6 A, 0.122 Ω@10V, SOT-363F(UF6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 1.6 A, 0.122 Ω@10V, SOT-363F(UF6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 1.6 A, 0.122 Ω@10V, SOT-363F(UF6)
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Power - Max [Max] | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Package / Case | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | FET Feature | Configuration | Mounting Type | Rds On (Max) @ Id, Vgs | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 5.1 nC | 500 mW | MOSFET (Metal Oxide) | 30 V | 2.6 V | 6-SMD Flat Leads | 1.6 A | 180 pF | UF6 | Logic Level Gate 4V Drive | 2 N-Channel (Dual) | Surface Mount | 122 mOhm | 150 °C |