Discrete Semiconductor Products
BSS84AKQBZ
ActiveNexperia USA Inc.
TRANS MOSFET P-CH 50V 0.27A 3-PIN DFN-D T/R AUTOMOTIVE AEC-Q101
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Discrete Semiconductor Products
BSS84AKQBZ
ActiveNexperia USA Inc.
TRANS MOSFET P-CH 50V 0.27A 3-PIN DFN-D T/R AUTOMOTIVE AEC-Q101
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSS84AKQBZ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 270 mA |
| Drain to Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 23.2 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-XDFN Exposed Pad |
| Power Dissipation (Max) | 4.2 W |
| Power Dissipation (Max) | 420 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 7.5 Ohm |
| Supplier Device Package | DFN1110D-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 12 V |
| Vgs (Max) [Min] | -20 V |
| Vgs(th) (Max) @ Id | 2.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSS84AKQB Series
P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources