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50 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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50 V, P-channel Trench MOSFET
50 V, P-channel Trench MOSFET
| Part | Package / Case | Vgs (Max) [Min] | Vgs (Max) [Max] | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Grade | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 3-XDFN Exposed Pad | -20 V | 12 V | 7.5 Ohm | 270 mA | 2.1 V | DFN1110D-3 | 23.2 pF | 4.5 V 10 V | P-Channel | MOSFET (Metal Oxide) | 150 °C | -55 °C | 4.2 W | 420 mW | 50 V | Automotive | Surface Mount Wettable Flank | 0.6 nC | AEC-Q101 |