Specification	HN1B04FE-Y,LXHF

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Power - Max [Max]	100 mW
Qualification	AEC-Q101
Supplier Device Package	ES6
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

HN1B04FE Series

Bipolar Transistors, PNP + NPN Bipolar Transistor, -50 V/50 V, -0.15 A/0.15 A, SOT-563(ES6)

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Package / Case	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Operating Temperature	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade	Vce Saturation (Max) @ Ib, Ic	Vce Saturation (Max) @ Ib, Ic	Qualification
Toshiba Semiconductor and Storage HN1B04FE-GR,LF	200 hFE	SOT-563 SOT-666	150 mA	100 mW	250 mV	Surface Mount	50 V	100 nA	1 NPN 1 PNP	150 °C	ES6
Toshiba Semiconductor and Storage HN1B04FE-Y,LF		SOT-563 SOT-666	150 mA	100 mW	250 mV	Surface Mount	50 V	100 nA	1 NPN 1 PNP	150 °C	ES6	120
Toshiba Semiconductor and Storage HN1B04FE-GR,LXHF	200 hFE	SOT-563 SOT-666	150 mA	100 mW		Surface Mount	50 V	100 nA	1 NPN 1 PNP	150 °C	ES6		Automotive	250 mV	300 mV	AEC-Q101
Toshiba Semiconductor and Storage HN1B04FE-Y,LXHF		SOT-563 SOT-666	150 mA	100 mW		Surface Mount	50 V	100 nA	1 NPN 1 PNP	150 °C	ES6	120	Automotive	250 mV	300 mV	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	7989	$ 0.69

General part information

Bipolar Transistors, PNP + NPN Bipolar Transistor, -50 V/50 V, -0.15 A/0.15 A, SOT-563(ES6)

Technical documentation and resources