Discrete Semiconductor Products
HN1B04FE-GR,LF
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP + NPN BIPOLAR TRANSISTOR, -50 V/50 V, -0.15 A/0.15 A, SOT-563(ES6)
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Discrete Semiconductor Products
HN1B04FE-GR,LF
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP + NPN BIPOLAR TRANSISTOR, -50 V/50 V, -0.15 A/0.15 A, SOT-563(ES6)
Technical Specifications
Parameters and characteristics for this part
| Specification | HN1B04FE-GR,LF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 150 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 hFE |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-563, SOT-666 |
| Power - Max [Max] | 100 mW |
| Supplier Device Package | ES6 |
| Transistor Type | 1 NPN, 1 PNP |
| Vce Saturation (Max) @ Ib, Ic | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2603 | $ 0.24 | |
Description
General part information
HN1B04FE Series
Bipolar Transistors, PNP + NPN Bipolar Transistor, -50 V/50 V, -0.15 A/0.15 A, SOT-563(ES6)
Documents
Technical documentation and resources
