SCT30N120H
ActiveSILICON CARBIDE POWER MOSFET 1200 V, 45 A, 90 MOHM (TYP. TJ = 150 C) IN AN H2PAK-2 PACKAGE
SCT30N120H
ActiveSILICON CARBIDE POWER MOSFET 1200 V, 45 A, 90 MOHM (TYP. TJ = 150 C) IN AN H2PAK-2 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT30N120H |
|---|---|
| Drain to Source Voltage (Vdss) | 1.2 kV |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 105 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -55 ░C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 270 W |
| Rds On (Max) @ Id, Vgs | 100 mOhm |
| Supplier Device Package | H2Pak-2 |
| Vgs (Max) [Max] | 25 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 23.35 | |
| 10 | $ 21.54 | |||
| 25 | $ 20.57 | |||
| 100 | $ 18.39 | |||
| 250 | $ 17.54 | |||
| 500 | $ 16.70 | |||
| Digi-Reel® | 1 | $ 23.35 | ||
| 10 | $ 21.54 | |||
| 25 | $ 20.57 | |||
| 100 | $ 18.39 | |||
| 250 | $ 17.54 | |||
| 500 | $ 16.70 | |||
| N/A | 0 | $ 0.00 | ||
| Tape & Reel (TR) | 1000 | $ 14.97 | ||
| Mouser | N/A | 1 | $ 23.35 | |
| 10 | $ 20.76 | |||
| 25 | $ 20.75 | |||
| 100 | $ 18.15 | |||
| 250 | $ 18.00 | |||
| 1000 | $ 16.10 | |||
| TME | N/A | 1 | $ 47.54 | |
| 5 | $ 44.85 | |||
| 25 | $ 39.65 | |||
| 100 | $ 35.61 | |||
| 250 | $ 33.26 | |||
Description
General part information
SCT30N120H Series
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Documents
Technical documentation and resources