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Discrete Semiconductor Products

STB22N60DM6

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STMicroelectronics

N-CHANNEL 600 V, 200 MOHM TYP., 15 A MDMESH DM6 POWER MOSFET IN A D2PAK PACKAGE

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D2Pak
Discrete Semiconductor Products

STB22N60DM6

Active
STMicroelectronics

N-CHANNEL 600 V, 200 MOHM TYP., 15 A MDMESH DM6 POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB22N60DM6
Current - Continuous Drain (Id) @ 25°C15 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)130 W
Rds On (Max) @ Id, Vgs240 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.40
Tape & Reel (TR) 1000$ 1.57
2000$ 1.48
5000$ 1.42

Description

General part information

STB22 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.