Discrete Semiconductor Products

NTMS4873NFR2G

Obsolete

POWER MOSFET 30V 11.7A 12 MOHM DUAL N-CHANNEL SO-8 WITH SCHOTTKY DIODE

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

POWER MOSFET 30V 11.7A 12 MOHM DUAL N-CHANNEL SO-8 WITH SCHOTTKY DIODE

Technical Specifications

Parameters and characteristics for this part

Specification	NTMS4873NFR2G

Current - Continuous Drain (Id) @ 25°C	7.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	1900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	870 mW
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Power MOSFET 30V 11.7A 12 mOhm Dual N-Channel SO-8 with Schottky Diode

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
ON Semiconductor NTMS4800NR2G	4.5 V 10 V	-55 °C	150 °C	7.7 nC	30 V	8-SOIC	N-Channel	MOSFET (Metal Oxide)	20 mOhm	20 V	3 V	4.9 A	940 pF	8-SOIC	3.9 mm	0.154 in	750 mW	Surface Mount
ON Semiconductor NTMS4872NR2G	4.5 V 10 V	-55 °C	150 °C		30 V	8-SOIC	N-Channel	MOSFET (Metal Oxide)	13.5 mOhm	20 V	2.5 V	6 A 10.2 A	1700 pF	8-SOIC	3.9 mm	0.154 in		Surface Mount	15 nC	820 mW
ON Semiconductor NTMS4873NFR2G	4.5 V 10 V	-55 °C	150 °C	16 nC	30 V	8-SOIC	N-Channel	MOSFET (Metal Oxide)	12 mOhm	20 V	2.5 V	7.1 A	1900 pF	8-SOIC	3.9 mm	0.154 in	870 mW	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This 30 V N-Channel power MOSFET contains an integrated Schottky diode.

Technical documentation and resources