NTMS4873NF Series

Power MOSFET 30V 11.7A 12 mOhm Dual N-Channel SO-8 with Schottky Diode

Catalog

Power MOSFET 30V 11.7A 12 mOhm Dual N-Channel SO-8 with Schottky Diode

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
ON Semiconductor NTMS4800NR2G	4.5 V 10 V	-55 °C	150 °C	7.7 nC	30 V	8-SOIC	N-Channel	MOSFET (Metal Oxide)	20 mOhm	20 V	3 V	4.9 A	940 pF	8-SOIC	3.9 mm	0.154 in	750 mW	Surface Mount
ON Semiconductor NTMS4872NR2G	4.5 V 10 V	-55 °C	150 °C		30 V	8-SOIC	N-Channel	MOSFET (Metal Oxide)	13.5 mOhm	20 V	2.5 V	6 A 10.2 A	1700 pF	8-SOIC	3.9 mm	0.154 in		Surface Mount	15 nC	820 mW
ON Semiconductor NTMS4873NFR2G	4.5 V 10 V	-55 °C	150 °C	16 nC	30 V	8-SOIC	N-Channel	MOSFET (Metal Oxide)	12 mOhm	20 V	2.5 V	7.1 A	1900 pF	8-SOIC	3.9 mm	0.154 in	870 mW	Surface Mount

Power MOSFET 30V 11.7A 12 mOhm Dual N-Channel SO-8 with Schottky Diode

• Low RDSonto Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• SOIC8 Surface Mount Package Saves Board Space

• This is a PbFree Device

This 30 V N-Channel power MOSFET contains an integrated Schottky diode.