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SOT8092-1
Discrete Semiconductor Products

GANB1R2-040QBAZ

Active
Nexperia USA Inc.

40 V, 1.2 MOHM BI-DIRECTIONAL GALLIUM NITRIDE (GAN) FET IN A 4.0 MM X 6.0 MM VERY-THIN-PROFILE QUAD FLAT NO-LEAD PACKAGE (VQFN)

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Documents40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)VQFN16: very thin quad flatpack; no leads; 6 mm x 4 mm x 0.85 mm body
SOT8092-1
Discrete Semiconductor Products

GANB1R2-040QBAZ

Active
Nexperia USA Inc.

40 V, 1.2 MOHM BI-DIRECTIONAL GALLIUM NITRIDE (GAN) FET IN A 4.0 MM X 6.0 MM VERY-THIN-PROFILE QUAD FLAT NO-LEAD PACKAGE (VQFN)

Deep-Dive with AI

Documents40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)VQFN16: very thin quad flatpack; no leads; 6 mm x 4 mm x 0.85 mm body

Technical Specifications

Parameters and characteristics for this part

SpecificationGANB1R2-040QBAZ
null

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2390$ 10.16

Description

General part information

GANB1R2-040QBA Series

The GANB1R2-040QBA is a 40 V, 1.2 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistor (HEMT) in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance.