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GANB1R2-040QBAZActive
Nexperia USA Inc.
40 V, 1.2 MOHM BI-DIRECTIONAL GALLIUM NITRIDE (GAN) FET IN A 4.0 MM X 6.0 MM VERY-THIN-PROFILE QUAD FLAT NO-LEAD PACKAGE (VQFN)
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40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
VQFN16: very thin quad flatpack; no leads; 6 mm x 4 mm x 0.85 mm body