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SOT363
Discrete Semiconductor Products

NX3020NAKS,115

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Nexperia USA Inc.

MOSFETS 30 V, 200 MA DUAL N-CHANNEL TRENCH MOSFET

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SOT363
Discrete Semiconductor Products

NX3020NAKS,115

Active
Nexperia USA Inc.

MOSFETS 30 V, 200 MA DUAL N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationNX3020NAKS,115
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C180 mA
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.44 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]13 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-363, SC-88, 6-TSSOP
Power - Max [Max]375 mW
Rds On (Max) @ Id, Vgs4.5 Ohm
Supplier Device Package6-TSSOP
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1109$ 0.43
MouserN/A 1$ 0.30
10$ 0.19
100$ 0.09
500$ 0.09
1000$ 0.07
3000$ 0.04
24000$ 0.04

Description

General part information

NX3020NAKS Series

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.