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30 V, 180 mA dual N-channel Trench MOSFET
Description
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Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, 180 mA dual N-channel Trench MOSFET
30 V, 180 mA dual N-channel Trench MOSFET
| Part | Vgs(th) (Max) @ Id | Mounting Type | Technology | Gate Charge (Qg) (Max) @ Vgs | Power - Max [Max] | FET Feature | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Rds On (Max) @ Id, Vgs | Configuration | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 1.5 V | Surface Mount | MOSFET (Metal Oxide) | 0.44 nC | 375 mW | Logic Level Gate | 6-TSSOP | 150 °C | -55 °C | 180 mA | 6-TSSOP SC-88 SOT-363 | 4.5 Ohm | 2 N-Channel (Dual) | 13 pF | 30 V |