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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

IPB110N20N3LFATMA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; D2PAK TO-263 PACKAGE; 11 MOHM; WIDE SOA

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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

IPB110N20N3LFATMA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; D2PAK TO-263 PACKAGE; 11 MOHM; WIDE SOA

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB110N20N3LFATMA1
Current - Continuous Drain (Id) @ 25°C88 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]76 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]650 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)250 W
Rds On (Max) @ Id, Vgs11 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 9.24
10$ 6.34
100$ 4.70
500$ 4.28
Digi-Reel® 1$ 9.24
10$ 6.34
100$ 4.70
500$ 4.28
N/A 1808$ 7.45
Tape & Reel (TR) 1000$ 4.28
NewarkEach (Supplied on Full Reel) 1000$ 5.95

Description

General part information

IPB110 Series

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (RDS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art RDS(on)of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Documents

Technical documentation and resources