IPB110 Series
Manufacturer: INFINEON
Beta
⌘K
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; D2PAK TO-263 PACKAGE; 11 MOHM; WIDE SOA
| Part | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 20 V | 10 V | 88 A | 250 W | 4.2 V | 11 mOhm | N-Channel | 650 pF | MOSFET (Metal Oxide) | Surface Mount | 150 °C | -55 °C | 76 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 200 V | ||
INFINEON | 20 V | 4.5 V 10 V | 100 A | 300 W | 11 mOhm | P-Channel | 8500 pF | MOSFET (Metal Oxide) | Surface Mount | 175 °C | -55 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 60 V | 281 nC | PG-TO263-3-2 |