Specification	FCPF7N60NT

Current - Continuous Drain (Id) @ 25°C	6.8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35.6 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	30.5 W
Rds On (Max) @ Id, Vgs	520 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FCPF7N60NT Series

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 6.8 A, 520 mΩ, TO-220F

Part	Technology	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
ON Semiconductor FCPF7N60NT	MOSFET (Metal Oxide)	Through Hole	30 V	35.6 nC	30.5 W	N-Channel	6.8 A	TO-220-3 Full Pack	4 V	TO-220F-3	600 V	10 V	-55 °C	150 °C	520 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	202	$ 1.49

Description

General part information

FCPF7N60NT Series

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Documents

Technical documentation and resources

Package Drawing-221AT-TO-220 Fullpack, 3-Lead / TO-220F-3FG

Package Drawing