FCPF7N60NT Series

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 6.8 A, 520 mΩ, TO-220F

Catalog

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 6.8 A, 520 mΩ, TO-220F

Part	Technology	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
ON Semiconductor FCPF7N60NT	MOSFET (Metal Oxide)	Through Hole	30 V	35.6 nC	30.5 W	N-Channel	6.8 A	TO-220-3 Full Pack	4 V	TO-220F-3	600 V	10 V	-55 °C	150 °C	520 mOhm

Catalog

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 6.8 A, 520 mΩ, TO-220F

Key Features

• RDS(on)= 460mΩ ( Typ.) @ VGS= 10V, ID= 3.4A

• Ultra low gate charge ( Typ. Qg= 17.8nC )

• Low effective output capacitance ( Typ. Coss.eff = 91pF )

• 100% avalanche tested

• RoHS compliant

Description

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.