HMC414MS8GE
LTBRF AMPLIFIER, 2.2GHZ TO 2.8GHZ, 20 DB GAIN, MSOP-EP-8, -40 °C TO 85 °C
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HMC414MS8GE
LTBRF AMPLIFIER, 2.2GHZ TO 2.8GHZ, 20 DB GAIN, MSOP-EP-8, -40 °C TO 85 °C
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC414MS8GE |
|---|---|
| Current - Supply | 300 mA |
| Frequency [Max] | 2.8 GHz |
| Frequency [Min] | 2.2 GHz |
| Gain | 20 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 7 dB |
| P1dB | 27 dB |
| Package / Case | 3 mm, 0.118 in |
| Package / Case | Exposed Pad, 8-MSOP, 8-TSSOP |
| RF Type | Bluetooth |
| Supplier Device Package | 8-MSOP-EP |
| Voltage - Supply [Max] | 5 V |
| Voltage - Supply [Min] | 2.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
HMC414 Series
The HMC414MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.ApplicationsBLUETOOTHMMDS
Documents
Technical documentation and resources
