HMC414 Series

InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz

Manufacturer: Analog Devices Inc./Maxim Integrated

Catalog

InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz

Part	RF Type	Mounting Type	Current - Supply	Gain	Noise Figure	Frequency [Min]	Frequency [Max]	P1dB	Package / Case	Package / Case	Voltage - Supply [Min]	Voltage - Supply [Max]	Supplier Device Package
Analog Devices Inc./Maxim Integrated HMC414MS8GETR	Bluetooth	Surface Mount	300 mA	20 dBi	7 dB	2.2 GHz	2.8 GHz	27 dB	0.118 in 3 mm	8-MSOP 8-TSSOP Exposed Pad	2.75 V	5 V	8-MSOP-EP
Analog Devices Inc./Maxim Integrated HMC414MS8GE	Bluetooth	Surface Mount	300 mA	20 dBi	7 dB	2.2 GHz	2.8 GHz	27 dB	0.118 in 3 mm	8-MSOP 8-TSSOP Exposed Pad	2.75 V	5 V	8-MSOP-EP

Catalog

InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz

Description

The HMC414MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.ApplicationsBLUETOOTHMMDS