STN3N40K3
ActiveMOSFET TRANSISTOR, N CHANNEL, 1.8 A, 400 V, 3 OHM, 10 V, 3.75 V ROHS COMPLIANT: YES
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STN3N40K3
ActiveMOSFET TRANSISTOR, N CHANNEL, 1.8 A, 400 V, 3 OHM, 10 V, 3.75 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | STN3N40K3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.8 A |
| Drain to Source Voltage (Vdss) | 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 165 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) [Max] | 3.3 W |
| Rds On (Max) @ Id, Vgs | 3.4 Ohm |
| Supplier Device Package | SOT-223 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STN3N40K3 Series
This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
Documents
Technical documentation and resources