Discrete Semiconductor Products

SIHH186N60EF-T1GE3

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POWER MOSFET WITH FAST BODY DIODE

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Discrete Semiconductor Products

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POWER MOSFET WITH FAST BODY DIODE

Technical Specifications

Parameters and characteristics for this part

Specification	SIHH186N60EF-T1GE3

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1081 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	114 W
Rds On (Max) @ Id, Vgs	193 mOhm
Supplier Device Package	PowerPAK® 8 x 8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIHH186N60EF-T1GE3	10 V	8-PowerTDFN	Surface Mount	PowerPAK® 8 x 8	N-Channel	1081 pF	16 A	600 V	30 V	32 nC	MOSFET (Metal Oxide)	193 mOhm	114 W	-55 °C	150 °C	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 16A (Tc) 114W (Tc) Surface Mount PowerPAK® 8 x 8

Technical documentation and resources