SIHH186 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
POWER MOSFET WITH FAST BODY DIODE
| Part | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Mounting Type | Supplier Device Package | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Technology | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 10 V | 8-PowerTDFN | Surface Mount | PowerPAK® 8 x 8 | N-Channel | 1081 pF | 16 A | 600 V | 30 V | 32 nC | MOSFET (Metal Oxide) | 193 mOhm | 114 W | -55 °C | 150 °C | 5 V |