Discrete Semiconductor Products

PSMN047-100NSEX

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N-CHANNEL 100 V, 53 MOHM STANDARD LEVEL ASFET WITH ENHANCED SOA IN DFN2020. DESIGNED FOR HIGH POWER POE, INRUSH MANAGEMENT, EFUSE AND RELAY REPLACEMENT

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DocumentsPSMN047-100NSEX | Datasheet Foster model PSMN047-100NSE +8

Discrete Semiconductor Products

PSMN047-100NSEX

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Nexperia USA Inc.

N-CHANNEL 100 V, 53 MOHM STANDARD LEVEL ASFET WITH ENHANCED SOA IN DFN2020. DESIGNED FOR HIGH POWER POE, INRUSH MANAGEMENT, EFUSE AND RELAY REPLACEMENT

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DocumentsPSMN047-100NSEX | Datasheet Foster model PSMN047-100NSE +8

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN047-100NSEX

Current - Continuous Drain (Id) @ 25°C	18.4 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	815 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	42 W
Rds On (Max) @ Id, Vgs	53.4 mOhm
Supplier Device Package	DFN2020M-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

PSMN047-100NSE Series

N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Vgs (Max)
Nexperia USA Inc. PSMN047-100NSEX	18.4 A	Surface Mount	DFN2020M-6	815 pF	10 V	100 V	6-UDFN Exposed Pad	53.4 mOhm	N-Channel	13.3 nC	MOSFET (Metal Oxide)	175 °C	-55 °C	3.6 V	42 W	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.88

Description

General part information

PSMN047-100NSE Series

New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90 W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of "soft-start", thermal management and power density requirements. These ASFETs combine enhanced SOA in a compact 2 mm x 2 mm footprint making them ideally placed for a variety of applications including PoE, eFuse and relay replacement.