Specification	SSM6N43FU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	1.5 V
Gate Charge (Qg) (Max) @ Vgs	1.23 nC
Input Capacitance (Ciss) (Max) @ Vds	46 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	200 mW
Rds On (Max) @ Id, Vgs	630 mOhm
Supplier Device Package	US6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

SSM6N43FU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.5 A, 0.66 Ω@4.5V, SOT-363(US6)

Part	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Configuration	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Package / Case	FET Feature	FET Feature	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM6N43FU,LF	630 mOhm	MOSFET (Metal Oxide)	500 mA	150 °C	46 pF	US6	1 V	2 N-Channel (Dual)	Surface Mount	1.23 nC	200 mW	6-TSSOP SC-88 SOT-363	Logic Level Gate	1.5 V	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	9335	$ 0.37

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.5 A, 0.66 Ω@4.5V, SOT-363(US6)

Technical documentation and resources