High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.5 A, 0.66 Ω@4.5V, SOT-363(US6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.5 A, 0.66 Ω@4.5V, SOT-363(US6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.5 A, 0.66 Ω@4.5V, SOT-363(US6)
| Part | Rds On (Max) @ Id, Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Vgs(th) (Max) @ Id | Configuration | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Power - Max [Max] | Package / Case | FET Feature | FET Feature | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 630 mOhm | MOSFET (Metal Oxide) | 500 mA | 150 °C | 46 pF | US6 | 1 V | 2 N-Channel (Dual) | Surface Mount | 1.23 nC | 200 mW | 6-TSSOP SC-88 SOT-363 | Logic Level Gate | 1.5 V | 20 V |