Specification	FCPF400N80ZL1-F154

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	800 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	2350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	35.7 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

FCPF400N80ZL1-F154 Series

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220F Ultra narrow lead

Part	Technology	FET Type	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FCPF400N80ZL1-F154	MOSFET (Metal Oxide)	N-Channel	TO-220-3 Full Pack	Through Hole	2350 pF	35.7 W	400 mOhm	56 nC	-55 °C	150 °C	20 V	11 A	800 V	TO-220F-3	4.5 V
ON Semiconductor FCPF400N80ZL1	MOSFET (Metal Oxide)	N-Channel	TO-220-3 Full Pack	Through Hole	2350 pF	35.7 W	400 mOhm	56 nC	-55 °C	150 °C	20 V	11 A	800 V	TO-220F-3	4.5 V	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.75
		10	$ 3.15
		100	$ 2.24
		500	$ 1.85
		1000	$ 1.77
Newark	Each	1000	$ 2.35
		2500	$ 1.90
		5000	$ 1.84
ON Semiconductor	N/A	1	$ 1.88

Description

General part information

FCPF400N80ZL1-F154 Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.