FCPF400N80ZL1-F154 Series

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220F Ultra narrow lead

Catalog

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220F Ultra narrow lead

Part	Technology	FET Type	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FCPF400N80ZL1-F154	MOSFET (Metal Oxide)	N-Channel	TO-220-3 Full Pack	Through Hole	2350 pF	35.7 W	400 mOhm	56 nC	-55 °C	150 °C	20 V	11 A	800 V	TO-220F-3	4.5 V
ON Semiconductor FCPF400N80ZL1	MOSFET (Metal Oxide)	N-Channel	TO-220-3 Full Pack	Through Hole	2350 pF	35.7 W	400 mOhm	56 nC	-55 °C	150 °C	20 V	11 A	800 V	TO-220F-3	4.5 V	10 V

Catalog

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220F Ultra narrow lead

Key Features

• Typ. RDS(on)= 340 mΩ

• Ultra Low Gate Charge (Typ. Qg= 43 nC)

• Low Eoss(Typ. 4.1 uJ @ 400 V)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 138 pF)

• 100% Avalanche Tested

• RoHS Compliant

• ESD Improved Capability

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.