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ONSEMI FDMA1032CZ
Discrete Semiconductor Products

FDMA2002NZ

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ON Semiconductor

DUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 2.9A, 123MΩ

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ONSEMI FDMA1032CZ
Discrete Semiconductor Products

FDMA2002NZ

Active
ON Semiconductor

DUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 2.9A, 123MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMA2002NZ
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C2.9 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]3 nC
Input Capacitance (Ciss) (Max) @ Vds220 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-VDFN Exposed Pad
Power - Max [Max]650 mW
Rds On (Max) @ Id, Vgs123 mOhm
Supplier Device Package6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.76
10$ 0.66
100$ 0.46
500$ 0.38
1000$ 0.32
Digi-Reel® 1$ 0.76
10$ 0.66
100$ 0.46
500$ 0.38
1000$ 0.32
Tape & Reel (TR) 3000$ 0.29
6000$ 0.27
9000$ 0.25
30000$ 0.25
NewarkEach (Supplied on Full Reel) 3000$ 0.34
6000$ 0.31
12000$ 0.29
18000$ 0.27
30000$ 0.26
ON SemiconductorN/A 1$ 0.23

Description

General part information

FDMA2002NZ Series

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.