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BC817K40E6327HTSA1
Discrete Semiconductor Products

BC817K40E6327HTSA1

LTB
INFINEON

BIPOLAR TRANSISTORS - BJT AF TRANS GP BJT NPN 45V 0.5

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BC817K40E6327HTSA1
Discrete Semiconductor Products

BC817K40E6327HTSA1

LTB
INFINEON

BIPOLAR TRANSISTORS - BJT AF TRANS GP BJT NPN 45V 0.5

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBC817K40E6327HTSA1
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]250
Frequency - Transition170 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]500 mW
Supplier Device PackagePG-SOT23
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic700 mV
Voltage - Collector Emitter Breakdown (Max) [Max]45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1841$ 0.23
MouserN/A 1$ 0.22
10$ 0.13
100$ 0.08
500$ 0.07
1000$ 0.05
3000$ 0.05
6000$ 0.04
9000$ 0.04
24000$ 0.03

Description

General part information

BC817 Series

NPN Silicon AF Transistor

Documents

Technical documentation and resources