
Discrete Semiconductor Products
BC817K40E6327HTSA1
LTBINFINEON
BIPOLAR TRANSISTORS - BJT AF TRANS GP BJT NPN 45V 0.5
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DocumentsBC817K40E6327HTSA1 | Datasheet

Discrete Semiconductor Products
BC817K40E6327HTSA1
LTBINFINEON
BIPOLAR TRANSISTORS - BJT AF TRANS GP BJT NPN 45V 0.5
Deep-Dive with AI
DocumentsBC817K40E6327HTSA1 | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | BC817K40E6327HTSA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 250 |
| Frequency - Transition | 170 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 500 mW |
| Supplier Device Package | PG-SOT23 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 700 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 45 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BC817 Series
NPN Silicon AF Transistor
Documents
Technical documentation and resources