
Discrete Semiconductor Products
BC817K25E6433HTMA1
LTBINFINEON
BIPOLAR TRANSISTORS - BJT NPN SILICON AF TRANSISTOR
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DocumentsBC817K25E6433HTMA1 | Datasheet

Discrete Semiconductor Products
BC817K25E6433HTMA1
LTBINFINEON
BIPOLAR TRANSISTORS - BJT NPN SILICON AF TRANSISTOR
Deep-Dive with AI
DocumentsBC817K25E6433HTMA1 | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | BC817K25E6433HTMA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 160 |
| Frequency - Transition | 170 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 500 mW |
| Supplier Device Package | PG-SOT23 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 700 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 45 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BC817 Series
BIPOLAR TRANSISTORS - BJT NPN SILICON AF TRANSISTOR
Documents
Technical documentation and resources