Discrete Semiconductor Products
BSH203,215
NRNDNexperia USA Inc.
P-CHANNEL VERTICAL D-MOS LOGIC LEVEL FET
Deep-Dive with AI
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Discrete Semiconductor Products
BSH203,215
NRNDNexperia USA Inc.
P-CHANNEL VERTICAL D-MOS LOGIC LEVEL FET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSH203,215 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 470 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 1.8 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 110 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 417 mW |
| Rds On (Max) @ Id, Vgs | 900 mOhm |
| Supplier Device Package | TO-236AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 8 V |
| Vgs(th) (Max) @ Id | 680 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.58 | |
Description
General part information
BSH203 Series
P-channel vertical D-MOS logic level FET
Documents
Technical documentation and resources