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P-channel vertical D-MOS logic level FET
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P-channel vertical D-MOS logic level FET
P-channel vertical D-MOS logic level FET
| Part | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Vgs (Max) [Max] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Drain to Source Voltage (Vdss) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | TO-236AB | 1.8 V | 4.5 V | 8 V | 680 mV | 900 mOhm | MOSFET (Metal Oxide) | 470 mA | 417 mW | 110 pF | P-Channel | 30 V | SC-59 SOT-23-3 TO-236-3 | 2.2 nC | 150 °C | -55 °C | Surface Mount |