Discrete Semiconductor Products

IPD65R1K4C6ATMA1

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TRANS MOSFET N-CH 650V 3.2A 3-PIN(2+TAB) DPAK T/R

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Discrete Semiconductor Products

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TRANS MOSFET N-CH 650V 3.2A 3-PIN(2+TAB) DPAK T/R

Technical Specifications

Parameters and characteristics for this part

Specification	IPD65R1K4C6ATMA1

Current - Continuous Drain (Id) @ 25°C	3.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	225 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	28 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs
INFINEON IPD65R1K4CFDATMA1	2.8 A	PG-TO252-3	28.4 W	10 V	N-Channel	4.5 V	650 V	1.4 Ohm	150 °C	-55 °C	262 pF	MOSFET (Metal Oxide)	Surface Mount	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 nC
INFINEON IPD65R1K4C6ATMA1	3.2 A	PG-TO252-3	28 W	10 V	N-Channel	3.5 V	650 V	1.4 Ohm	150 °C	-55 °C	225 pF	MOSFET (Metal Oxide)	Surface Mount	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	10.5 nC

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General part information

N-Channel 650 V 3.2A (Tc) 28W (Tc) Surface Mount PG-TO252-3

Technical documentation and resources

No documents available