IPD65R1 Series
Manufacturer: INFINEON
MOSFET N-CH 650V 2.8A TO252-3
| Part | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds | Technology | Mounting Type | Vgs (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 2.8 A | PG-TO252-3 | 28.4 W | 10 V | N-Channel | 4.5 V | 650 V | 1.4 Ohm | 150 °C | -55 °C | 262 pF | MOSFET (Metal Oxide) | Surface Mount | 20 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 10 nC |
INFINEON | 3.2 A | PG-TO252-3 | 28 W | 10 V | N-Channel | 3.5 V | 650 V | 1.4 Ohm | 150 °C | -55 °C | 225 pF | MOSFET (Metal Oxide) | Surface Mount | 20 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 10.5 nC |