Discrete Semiconductor Products

IRFD224

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MOSFET N-CH 250V 630MA 4DIP

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Discrete Semiconductor Products

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MOSFET N-CH 250V 630MA 4DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IRFD224

Current - Continuous Drain (Id) @ 25°C	630 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	260 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-DIP (0.300", 7.62mm)
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	1.1 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division IRFD224PBF	N-Channel	1.1 Ohm	-55 °C	150 °C	260 pF	4-DIP (0.300" 7.62mm)	630 mA	14 nC	Through Hole	1 W	10 V	MOSFET (Metal Oxide)	250 V	20 V	4 V
Vishay General Semiconductor - Diodes Division IRFD224	N-Channel	1.1 Ohm	-55 °C	150 °C	260 pF	4-DIP (0.300" 7.62mm)	630 mA	14 nC	Through Hole	1 W	10 V	MOSFET (Metal Oxide)	250 V	20 V	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 630mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

Technical documentation and resources